document number: 94406 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 11-aug-08 1 phase control thyristors (stud version), 300 a ST300Spbf series vishay high power products features ? center amplifying gate ? international standard case to-209ae (to-118) ? hermetic metal case wi th ceramic insulator ? threaded studs unf 3/4"-16unf-2a or iso m24 x 1.5 ? compression bonded encapsulation for heavy duty operations such as se vere thermal cycling ? lead (pb)-free ? designed and qualified for industrial level typical applications ? dc motor controls ? controlled dc power supplies ? ac controllers electrical specifications product summary i t(av) 300 a to-209ae (to-118) rohs compliant major ratings and characteristics parameter test conditions values units i t(av) 300 a t c 75 c i t(rms) 470 a i tsm 50 hz 8000 60 hz 8380 i 2 t 50 hz 320 ka 2 s 60 hz 292 v drm /v rrm 400 to 2000 v t q typical 100 s t j - 40 to 125 c voltage ratings type number voltage code v drm /v rrm , maximum repetitive peak and off-state voltage v v rsm , maximum non-repetitive peak voltage v i drm /i rrm maximum at t j = t j maximum ma ST300S 04 400 500 50 08 800 900 12 1200 1300 16 1600 1700 18 1800 1900 20 2000 2100
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94406 2 revision: 11-aug-08 ST300Spbf series vishay high power products phase control thyristors (stud version), 300 a absolute maximum ratings parameter symbol test conditions values units maximum average on-state current at case temperature i t(av) 180 conduction, half sine wave 300 a 75 c maximum rms on-state current i t(rms) dc at 64 c case temperature 470 a maximum peak, one-cycle non-repetitive surge current i tsm t = 10 ms no voltage reapplied sinusoidal half wave, initial t j = t j maximum 8000 t = 8.3 ms 8380 t = 10 ms 100 % v rrm reapplied 6730 t = 8.3 ms 7040 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 320 ka 2 s t = 8.3 ms 292 t = 10 ms 100 % v rrm reapplied 226 t = 8.3 ms 207 maximum i 2 t for fusing i 2 t t = 0.1 to 10 ms, no voltage reapplied 3200 ka 2 s low level value of threshold voltage v t(to)1 (16.7 % x x i t(av) < i < x i t(av) ), t j = t j maximum 0.97 v high level value of threshold voltage v t(to)2 (i > x i t(av) ), t j = t j maximum 0.98 low level value of on-state slope resistance r t1 (16.7 % x x i t(av) < i < x i t(av) ), t j = t j maximum 0.74 m high level value of on-s tate slope resistance r t2 (i > x i t(av) ), t j = t j maximum 0.73 maximum on-state voltage v tm i pk = 940 a, t j = t j maximum, t p = 10 ms sine pulse 1.66 v maximum holding current i h t j = 25 c, anode supply 12 v resistive load 600 ma typical latching current i l 1000 switching parameter symbol test conditions values units maximum non-repetitive rate of rise of turned-on current didt gate drive 20 v, 20 , t r 1 s t j = t j maximum, anode voltage 80 % v drm 1000 a/s typical delay time t d gate current 1 a, di g /dt = 1 a/s v d = 0.67 % v drm , t j = 25 c 1.0 s typical turn-off time t q i tm = 550 a, t j = t j maximum, di/dt = 40 a/s, v r = 50 v, dv/dt = 20 v/s, gate 0 v 100 , t p = 500 s 100 blocking parameter symbol test conditions values units maximum critical rate of rise of off-state voltage dv/dt t j = t j maximum linear to 80 % rated v drm 500 v/s maximum peak reverse and off-state leakage current i rrm , i drm t j = t j maximum, rated v drm /v rrm applied 30 ma
document number: 94406 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 11-aug-08 3 ST300Spbf series phase control thyristors (stud version), 300 a vishay high power products note ? the table above shows the increment of thermal resistance r thjc when devices operate at di fferent conduction angles than dc triggering parameter symbol test conditions values units typ. max. maximum peak gate power p gm t j = t j maximum, t p 5 ms 10.0 w maximum average gate power p g(av) t j = t j maximum, f = 50 hz, d% = 50 2.0 maximum peak positive gate current i gm t j = t j maximum, t p 5 ms 3.0 a maximum peak positive gate voltage + v gm t j = t j maximum, t p 5 ms 20 v maximum peak negative gate voltage - v gm 5.0 dc gate current required to trigger i gt t j = - 40 c maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 v anode to cathode applied 200 - ma t j = 25 c 100 200 t j = 125 c 50 - dc gate voltage required to trigger v gt t j = - 40 c 2.5 - v t j = 25 c 1.8 3 t j = 125 c 1.1 - dc gate current not to trigger i gd t j = t j maximum maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated v drm anode to cathode applied 10 ma dc gate voltage not to trigger v gd 0.25 v thermal and mechanical specifications parameter symbol test conditions values units maximum operating junction temperature range t j - 40 to 125 c maximum storage temperature range t stg - 40 to 150 maximum thermal resistance, junction to case r thjc dc operation 0.10 k/w maximum thermal resistance, case to heatsink r thcs mounting surface, smooth, flat and greased 0.03 mounting torque, 10 % non-lubricated threads 48.5 (425) n m (lbf in) approximate weight 535 g case style see dimensions - link at the end of datasheet to-209ae (to-118) r thjc conduction conduction angle sinusoidal conduction rec tangular conduction test conditions units 180 0.011 0.008 t j = t j maximum k/w 120 0.013 0.014 90 0.017 0.018 60 0.025 0.026 30 0.041 0.042
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94406 4 revision: 11-aug-08 ST300Spbf series vishay high power products phase control thyristors (stud version), 300 a fig. 1 - current ratings characteristics f ig. 2 - current ratings characteristics fig. 3 - on-state power loss characteristics fig. 4 - on-state power loss characteristics 70 80 90 100 110 120 130 0 50 100 150 200 250 300 350 maximum allowable case temperature (c) 30 60 90 120 180 average on-state current (a) conduction angle st3 0 0 s se r i e s r (dc) = 0.10 k/ w thjc 60 70 80 90 100 110 120 130 0100200300400500 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction period st3 0 0 s se r i e s r (dc) = 0.10 k/ w thjc 25 50 75 100 125 maximum allowable ambient temperature (c) 0 . 0 8 k / w 0 . 2 k / w 0 . 3 k / w 0 . 4 k / w 0 . 6 k / w 1 . 2 k / w r = 0 . 0 3 k / w - d e l t a r t h s a 0 . 1 2 k / w 0 40 80 120 160 200 240 280 320 360 400 440 480 0 40 80 120 160 200 240 280 320 180 120 90 60 30 rm s li m i t conduction angle maximum average on-state power loss (w) average on-state current (a) ST300S series t = 125c j 25 50 75 100 125 maximum allowable ambient temperature (c) r = 0 . 0 3 k/ w - de l t a r th s a 0 . 0 8 k / w 0 . 1 2 k / w 0 . 2 k / w 0 . 3 k / w 0 . 6 k / w 1 . 2 k / w 0 50 100 150 200 250 300 350 400 450 500 550 600 650 0 100 200 300 400 500 dc 180 120 90 60 30 rm s li m i t conduction period maximum average on-state power loss (w) average on-state current (a) ST300S series t = 125c j
document number: 94406 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 11-aug-08 5 ST300Spbf series phase control thyristors (stud version), 300 a vishay high power products fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current fig. 7 - on-state voltage drop characteristics fig. 8 - thermal impedance z thjc characteristics 3000 3500 4000 4500 5000 5500 6000 6500 7000 7500 110100 number of equa l amplitude half cycle current pulses (n) pe a k ha l f s ine wave on-state current (a) st3 0 0 s se r i e s init ia l t = 125c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j at any rated load condition and with rated v applied following surge. rrm 3000 3500 4000 4500 5000 5500 6000 6500 7000 7500 8000 8500 0.01 0.1 1 pu lse tra in du ra t io n ( s) versus pulse train duration. control peak half sine wave on-state current (a) ST300S series initial t = 125c no voltage reapplied rated v reapplied j rrm maximum non repetitive surge current of conduction may not be maintained. 100 1000 10000 0123456789 t = 2 5 c j instantaneous on-state current (a) instantaneous on-state voltage (v) t = 1 2 5 c j st3 0 0 s se r i e s 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 sq u a r e w a v e pu l se d u r a t i o n ( s) thjc st3 0 0 s se r i e s transient thermal impedanc e z (k/ w) steady state value r = 0 . 1 0 k/ w (dc operation) thjc
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94406 6 revision: 11-aug-08 ST300Spbf series vishay high power products phase control thyristors (stud version), 300 a fig. 9 - gate characteristics ordering information table 0.1 1 10 100 0.001 0.01 0.1 1 10 100 vgd ig d (b) (a) tj = 2 5 c tj = 1 2 5 c tj = - 4 0 c (2) (3) instantaneous gate current (a) instantaneous gate voltage (v) rectangular gate pulse a) recommended load line for b) recommended load line for <=30% rated di/dt : 10v, 10ohms fr e q u e n c y li m i t e d b y pg ( a v ) rated di/dt : 20v, 10ohms; tr<=1 s tr<=1 s devic e: ST300S series (1) (1) pgm = 10w, tp = 4ms (2) pgm = 20w, tp = 2ms (3) pgm = 40w, tp = 1ms (4) pgm = 60w, tp = 0.66ms (4) 1 - thyristor 2 - essential part number 3 - 0 = converter grade 4 - s = compression bonding stud 5 - voltage code x 100 = v rrm (see voltage ratings table) 6 - p = stud base 3/4" 16unf-2a threads 7 - 0 = eyelet terminals (gate and auxiliary cathode leads) 1 = fast-on terminals (gate and auxiliary cathode leads) m = stud base metric threads (m24 x 1.5) 3 = threaded top terminal 3/8" 24unf-2a 9 - lead (pb)-free 8 - critical dv/dt: none = 500 v/s (standard value) l = 1000 v/s (special selection) device code 5 1 3 24 6789 st 30 0 s 20 p 0 - pbf links to related documents dimensions http://www.vishay.com/doc?95084
document number: 95084 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 02-aug-07 1 to-209ae (to-118) outline dimensions vishay semiconductors dimensions - to-209ae (to-118) in millimeters (inches) note (1) for metric device: m24 x 1.5 - length screw 21 (0.83) maximum dimensions - to-209ae (to-118) with top thread terminal 3/8" in millimeters (inches) note (1) for metric device: m24 x 1.5 - length screw 21 (0.83) maximum fast-on terminals red cathode red silicon rubber 10.5 (0.41) nom. 245 (9.65) 10 (0.39) white gate 4.3 (0.17) dia. ceramic housing white shrink 47 (1.85) max. 245 (9.65) 255 (10.04) 38 (1.50) max. dia. 22 (0.87) max. 21 (0.82) max. sw 45 flexible leads 4.5 (0.18) max. c.s. 50 mm 2 (0.078 s.i.) red shrink 49 (1.92) max. 3/4"16 unf-2a (1) 27.5 (1.08) max. amp. 280000-1 ref-250 9.5 (0.37) min. 22 (0.86) min. 47 (1.85) max. 27.5 (1.08) max. 77.5 (3.05) 80.5 (3.17) 38 (1.5) dia. max. ceramic housing sw 45 21 (0.83) max. 3/4"-16unf-2a (1) 25 (0.98) 3/8"-24unf-2a 17 (0.67) dia.
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